The present application relates to semiconductor structure and forming method comprising: forming substrate, wherein plurality of capacitive contacts are provided in the substrate, plurality of electrically conductive contact pads are provided at surface of the substrate to be correspondingly connected to plurality of capacitive contacts on one-to-one basis, and a space is present between every two adjacent electrically conductive contact pads; forming filling layer that is fully filled in the space; forming stacked structure at the filling layer and surface of the electrically conductive contact pads, wherein the stacked structure includes plurality of supporting layers stacked one-on-another along direction perpendicular to the substrate, the filling layer is in contact with the supporting layer disposed at bottom of the stacked structure, and etching selection ratio between the filling layer and the supporting layer in contact therewith is greater than preset value; and etching the stacked structure to form capacitance hole.