- Patent Title: Semiconductor device and method of forming the semiconductor device
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Application No.: US17578891Application Date: 2022-01-19
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Publication No.: US11869937B2Publication Date: 2024-01-09
- Inventor: Marc Adam Bergendahl , Gauri Karve , Fee Li Lie , Eric R. Miller , Robert Russell Robison , John Ryan Sporre , Sean Teehan
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Yuanmin Cai
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/786
Abstract:
A semiconductor device including a fin structure including a recess, a first gate formed in the recess of the fin structure, and a second gate formed outside the fin structure.
Public/Granted literature
- US20220140074A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE Public/Granted day:2022-05-05
Information query
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