Invention Grant
- Patent Title: Heteroepitaxial wafer and method for producing a heteroepitaxial wafer
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Application No.: US16643003Application Date: 2018-08-16
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Publication No.: US11869942B2Publication Date: 2024-01-09
- Inventor: Sarad Bahadur Thapa , Martin Vorderwestner
- Applicant: SILTRONIC AG
- Applicant Address: DE Munich
- Assignee: SILTRONIC AG
- Current Assignee: SILTRONIC AG
- Current Assignee Address: DE Munich
- Agency: BROOKS KUSHMAN P.C.
- Priority: EP 188124 2017.08.28
- International Application: PCT/EP2018/072229 2018.08.16
- International Announcement: WO2019/042782A 2019.03.07
- Date entered country: 2020-02-28
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/02 ; H01L29/20 ; H01L29/205 ; H01L29/778
Abstract:
A heteroepitaxial wafer comprises, in the following order: a silicon substrate having a diameter and a thickness;
an AlN nucleation layer;
a first strain building layer which is an AlzGal-zN layer having a first average Al content z, wherein 0
an AlN nucleation layer;
a first strain building layer which is an AlzGal-zN layer having a first average Al content z, wherein 0
Information query
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