A silicon carbide semiconductor device, in particular a monolithically integrated trench Metal-Oxide-Semiconductor Field-Effect Transistor with segmentally surrounded trench Schottky diode, includes a semiconductor substrate, a trench Metal-Oxide-Semiconductor Field-Effect Transistor and a trench Schottky diode. The trench Schottky diode has a perpendicularly disposed trench extending in a first horizontal direction, a metal electrode filled into the trench, and a plurality of doped regions disposed segmentally and extending in a second horizontal direction around the trench. The first horizontal direction is substantially orthogonal to the second horizontal direction, a side wall and a bottom wall of the metal electrode in the trench forms a Schottky junction, and the current flowing from the metal electrode is restricted between adjacent doped regions.