Invention Grant
- Patent Title: Oxide field trench (OFT) diode control device
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Application No.: US17412556Application Date: 2021-08-26
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Publication No.: US11869959B2Publication Date: 2024-01-09
- Inventor: Frederic Gautier
- Applicant: STMicroelectronics (Tours) SAS
- Applicant Address: FR Tours
- Assignee: STMicroelectronics (Tours) SAS
- Current Assignee: STMicroelectronics (Tours) SAS
- Current Assignee Address: FR Tours
- Agency: Crowe & Dunlevy
- Priority: FR 08791 2020.08.28
- Main IPC: H02M3/335
- IPC: H02M3/335 ; H01L29/739 ; H01L27/07 ; H01L29/872 ; H03K17/74

Abstract:
A device includes a controllable current source connected between a first node and a first terminal coupled to a cathode of a controllable diode. A capacitor is connected between the first node and a second terminal coupled to an anode of the controllable diode. A first switch is connected between the first node and a third terminal coupled to a gate of the controllable diode. A second switch is connected between the second and third terminals. A first diode is connected between the third terminal and the second terminal, an anode of the first diode being preferably coupled to the third terminal.
Public/Granted literature
- US20220069110A1 OXIDE FIELD TRENCH (OFT) DIODE CONTROL DEVICE Public/Granted day:2022-03-03
Information query
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