Invention Grant
- Patent Title: Semiconductor device including energy level in drift layer
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Application No.: US17470626Application Date: 2021-09-09
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Publication No.: US11869970B2Publication Date: 2024-01-09
- Inventor: Kohei Oasa
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy LLP
- Priority: JP 21045548 2021.03.19
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/06 ; H01L29/66 ; H01L29/423
Abstract:
A semiconductor device includes an upper electrode; a lower electrode; a substrate positioned between the upper electrode and the lower electrode; a buried electrode part positioned between the substrate and the upper electrode, the buried electrode part including a gate electrode; and a silicon layer positioned between the substrate and the upper electrode. The silicon layer includes a mesa part next to the buried electrode part, a first region positioned between the mesa part and the substrate, and a second region positioned between the buried electrode part and the substrate. An energy level density of the first region is greater than an energy level density of the second region.
Public/Granted literature
- US20220302307A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2022-09-22
Information query
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