- Patent Title: Single sided channel mesa power junction field effect transistor
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Application No.: US17975356Application Date: 2022-10-27
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Publication No.: US11869982B2Publication Date: 2024-01-09
- Inventor: Vipindas Pala , Sudarsan Uppili
- Applicant: MONOLITHIC POWER SYSTEMS, INC.
- Applicant Address: US CA San Jose
- Assignee: Monolithic Power Systems, Inc.
- Current Assignee: Monolithic Power Systems, Inc.
- Current Assignee Address: US WA Kirkland
- Agency: Beyer Law Group LLP
- The original application number of the division: US16999942 2020.08.21
- Main IPC: H01L29/808
- IPC: H01L29/808 ; H01L29/78 ; H01L21/04 ; H01L29/10 ; H01L29/66 ; H01L29/16
Abstract:
Junction field effect transistors (JFETs) and related manufacturing methods are disclosed herein. A disclosed JFET includes a vertical channel region located in a mesa and a first channel control region located on a first side of the mesa. The first channel control region is at least one of a gate region and a first base region. The JFET also includes a second base region located on a second side of the mesa and extending through the mesa to contact the vertical channel region. The vertical channel can be an implanted vertical channel. The vertical channel can be asymmetrically located in the mesa towards the first side of the mesa.
Public/Granted literature
- US20230047121A1 SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR Public/Granted day:2023-02-16
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