Invention Grant
- Patent Title: Patterned epitaxial structure laser lift-off device
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Application No.: US16768686Application Date: 2018-09-21
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Publication No.: US11870003B2Publication Date: 2024-01-09
- Inventor: Xiaofeng He , Chengming Li , Xiuping He , Jianfeng Chen
- Applicant: NANTONG CHINA RAILWAY HUAYU ELECTRIC CO., LTD
- Applicant Address: CN Jiangsu
- Assignee: NANTONG CHINA RAILWAY HUAYU ELECTRIC CO., LTD
- Current Assignee: NANTONG CHINA RAILWAY HUAYU ELECTRIC CO., LTD
- Current Assignee Address: CN Jiangsu
- Priority: CN 1810630282.1 2018.06.19
- International Application: PCT/CN2018/106980 2018.09.21
- International Announcement: WO2019/242139A 2019.12.26
- Date entered country: 2020-05-31
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; B23K26/53 ; B23K26/06 ; B23K26/12 ; G02B27/09 ; H01L33/20 ; H01S5/02 ; B23K26/0622

Abstract:
A patterned epitaxial structure laser lift-off device, including a substrate, reshaping structures, a transmittance adjustment structure, a patterned epitaxial structure, gas transmission systems, an ultraviolet source, a lift-off chamber and a light entry window. The gas transmission systems are at two sides of the lift-off chamber; the light entry window is on the lift-off chamber; the ultraviolet source is above the outside of the light entry window; the patterned epitaxial structure is inside the lift-off chamber; the substrate is on the patterned epitaxial structure. The patterned epitaxial structure includes an epitaxial structure, a sapphire substrate, patterned structures, oblique interfaces and planar interfaces, several patterned structures being uniformly designed on the epitaxial structure, each of the patterned structures being a V-shaped groove structure formed by two oblique interfaces, two adjacent patterned structures being connected by means of a planar interface.
Public/Granted literature
- US20210175388A1 PATTERNED EPITAXIAL STRUCTURE LASER LIFT-OFF DEVICE Public/Granted day:2021-06-10
Information query
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