- Patent Title: Enhanced efficiency of LED structure with n-doped quantum barriers
-
Application No.: US17073136Application Date: 2020-10-16
-
Publication No.: US11870006B2Publication Date: 2024-01-09
- Inventor: Jian Yin , Dayan Ban , Ehsanollah Fathi , Gholamreza Chaji
- Applicant: VueReal Inc.
- Applicant Address: CA Waterloo
- Assignee: VueReal Inc.
- Current Assignee: VueReal Inc.
- Current Assignee Address: CA Waterloo
- Agency: Nixon Peabody LLP
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/32 ; H01L33/00 ; H01L33/02 ; H01L33/14 ; H01L33/30
Abstract:
The present invention provides light-emitting devices with improved quantum efficiency. The light emitting diode structure comprising: a p-doped layer an n-doped layer; and a multiple quantum well structure sandwiched between the p-doped layer and n-doped layer, wherein the multiple quantum well structure comprising a quantum well disposed between n-doped barrier layers.
Public/Granted literature
- US20210050477A1 ENHANCED EFFICIENCY OF LED STRUCTURE WITH N-DOPED QUANTUM BARRIERS Public/Granted day:2021-02-18
Information query
IPC分类:
