Invention Grant
- Patent Title: Antenna apparatus and fabrication method
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Application No.: US16939392Application Date: 2020-07-27
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Publication No.: US11870130B2Publication Date: 2024-01-09
- Inventor: Eung San Cho , Ashutosh Baheti , Saverio Trotta
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01Q1/22
- IPC: H01Q1/22 ; H01L23/66 ; H01L23/498 ; H01L21/48

Abstract:
A semiconductor device includes a semiconductor die comprising a radio frequency (RF) circuit, a first dielectric layer disposed over a first surface of the semiconductor die, an antenna layer disposed over a surface of the first dielectric layer, and an antenna feeding structure coupling the antenna layer to the RF circuit of the semiconductor die, wherein the semiconductor die comprises a via, and the antenna feeding structure comprises a first portion arranged within the opening of the semiconductor die and extending to the first surface of the semiconductor die, and a second portion arranged through the first dielectric layer.
Public/Granted literature
- US20220029271A1 Antenna Apparatus and Fabrication Method Public/Granted day:2022-01-27
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