Invention Grant
- Patent Title: Laser diode and method for manufacturing the same
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Application No.: US17227534Application Date: 2021-04-12
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Publication No.: US11870219B2Publication Date: 2024-01-09
- Inventor: Zhibai Zhong , Tao Ye , Min Zhang , Shao-Hua Huang , Shuiqing Li
- Applicant: Xiamen Sanan Optoelectronics Technology Co., LTD
- Applicant Address: CN Xiamen
- Assignee: Quanzhou San'An Semiconductor Technology Co., Ltd.
- Current Assignee: Quanzhou San'An Semiconductor Technology Co., Ltd.
- Current Assignee Address: CN Nanan
- Agency: Thomas | Horstemeyer, LLP
- Priority: CN 2010518817.3 2020.06.09
- Main IPC: H01S5/22
- IPC: H01S5/22 ; H01S5/042 ; H01S5/32 ; H01S5/16

Abstract:
A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.
Public/Granted literature
- US20210384702A1 LASER DIODE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2021-12-09
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