A film bulk acoustic resonator (FBAR) chip and package structure with an improved temperature coefficient that is capable of being more stable with respect to surrounding temperature changes, without any decrease in performance of Q factor or k2e. The FBAR chip and package structure includes a plurality of FBARs located on a central area of one surface of a substrate and each having a bottom electrode, a piezoelectric material, and a top electrode; and a temperature compensation layer formed around the central area of one surface of the substrate.