Invention Grant
- Patent Title: Semiconductor structure, and manufacturing method and control method thereof
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Application No.: US17391195Application Date: 2021-08-02
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Publication No.: US11871554B2Publication Date: 2024-01-09
- Inventor: Tao Chen , ZhiCheng Shi
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2010921763.5 2020.09.04
- Main IPC: G11C5/06
- IPC: G11C5/06 ; H10B12/00 ; G11C11/408 ; H01L29/66 ; H01L29/78

Abstract:
A semiconductor structure includes: a base substrate; an insulator, located on one side of the base substrate; bit lines, arranged in the insulator, the bit lines being distributed at intervals along first direction and extending along second direction; active bodies, located in the insulator, the active bodies being located on sides of respective bit lines facing away from the base substrate, orthographic projection of each active body on the base substrate at least partially coinciding with the orthographic projection of a respective bit line on the base substrate, and the active bodies being distributed at intervals along second direction; and word lines, located in the insulator and located on sides of respective bit lines facing away from the base substrate, the word lines being distributed at intervals along second direction and extending along first direction, and only one word line being arranged between two adjacent active bodies in second direction.
Public/Granted literature
- US20220077158A1 SEMICONDUCTOR STRUCTURE, AND MANUFACTURING METHOD AND CONTROL METHOD THEREOF Public/Granted day:2022-03-10
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