Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US17448521Application Date: 2021-09-22
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Publication No.: US11871564B2Publication Date: 2024-01-09
- Inventor: Yexiao Yu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2110351087.7 2021.03.31
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H10B12/00 ; H01L21/762 ; H01L21/768
Abstract:
A semiconductor structure manufacturing method includes: providing a substrate; forming an initial trench in the substrate; forming a sacrificial layer, the sacrificial layer including a first portion and a second portion, the first portion filling the initial trench and the second portion covering an upper surface of the substrate and an upper surface of the first portion; forming a division groove in the second portion, to pattern the second portion into a sacrificial pattern, the sacrificial pattern being arranged corresponding to the first portion; forming a filling layer in the division groove, the filling layer filling the division groove; removing the sacrificial pattern and the first portion, to form a word line trench; and forming a buried gate word line in the word line trench.
Public/Granted literature
- US20220320113A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-10-06
Information query
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