Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17395093Application Date: 2021-08-05
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Publication No.: US11871568B2Publication Date: 2024-01-09
- Inventor: Jin Won Lee , Nam Jae Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR 20180086842 2018.07.25
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11524 ; H10B43/27 ; H01L21/768 ; H01L23/535 ; H10B41/27 ; H10B41/35 ; H10B41/41 ; H10B43/35 ; H10B43/40
Abstract:
A semiconductor device includes a source structure penetrated by a first penetrating portion, a first stack structure disposed on the source structure and penetrated by a second penetrating portion overlapping the first penetrating portion.
Public/Granted literature
- US20210366929A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-11-25
Information query
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