Invention Grant
- Patent Title: P-type dopant and organic light emitting diode
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Application No.: US17053196Application Date: 2020-02-14
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Publication No.: US11871663B2Publication Date: 2024-01-09
- Inventor: Jiajia Luo
- Applicant: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Applicant Address: CN Hubei
- Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Hubei
- Agency: PV IP PC
- Agent Wei Te Chung; Zhigang Ma
- Priority: CN 1911164256.5 2019.11.25
- International Application: PCT/CN2020/075172 2020.02.14
- International Announcement: WO2021/103318A 2021.06.03
- Date entered country: 2020-11-05
- Main IPC: H10K85/60
- IPC: H10K85/60 ; C07C255/34 ; C07C255/56 ; C07D241/46 ; H10K50/15 ; H10K50/16 ; H10K50/17

Abstract:
A P-type dopant is provided, which is a planar aromatic compound having different numbers of fluorine atoms and cyano groups connected at a periphery thereof, and allows adjustment of highest occupied molecular orbital (HOMO) energy levels and lowest unoccupied molecular orbital (LUMO) energy levels and effectively increases luminous efficiency of a light emitting layer. Moreover, an organic light emitting diode is disclosed, including an anode, a cathode, and a light emitting structure located between the anode and the cathode, wherein a hole injecting layer of the light emitting structure is a hole injecting layer including the P-type dopant described above.
Public/Granted literature
- US20220271232A1 P-TYPE DOPANT AND ORGANIC LIGHT EMITTING DIODE Public/Granted day:2022-08-25
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