Invention Grant
- Patent Title: Magnetoresistance effect element
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Application No.: US18080498Application Date: 2022-12-13
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Publication No.: US11871681B2Publication Date: 2024-01-09
- Inventor: Tomoyuki Sasaki , Katsuyuki Nakada , Tatsuo Shibata
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP 15071412 2015.03.31
- The original application number of the division: US17333268 2021.05.28
- Main IPC: H01L29/82
- IPC: H01L29/82 ; G11C11/16 ; H01L27/105 ; G01R33/09 ; G11B5/39 ; H10N50/85 ; H10B61/00 ; H10N50/10
Abstract:
A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox (0
Public/Granted literature
- US20230225222A1 MAGNETORESISTANCE EFFECT ELEMENT Public/Granted day:2023-07-13
Information query
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