Disclosed is a resistive switching element. The resistive switching element includes a first oxide layer and a second oxide layer stacked one on top of the other such that an interface is present therebetween, wherein the first oxide layer and the second oxide layer are made of different metal oxides; two-dimensional electron gas (2DEG) present in the interface between the first oxide layer and the second oxide layer and functioning as an inactive electrode; and an active electrode disposed on the second oxide layer, wherein when a positive bias is applied to the active electrode, an electric field is generated between the active electrode and the two-dimensional electron gas, such that the second oxide layer is subjected to the electric field, and active metal ions from the active electrode are injected into the second oxide layer. The resistive switching element realizes highly uniform resistive switching operation.