- Patent Title: Acetal-protected silanol group-containing polysiloxane composition
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Application No.: US16329175Application Date: 2017-08-28
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Publication No.: US11884839B2Publication Date: 2024-01-30
- Inventor: Yuki Endo , Hiroaki Yaguchi , Makoto Nakajima
- Applicant: NISSAN CHEMICAL CORPORATION
- Applicant Address: JP Tokyo
- Assignee: NISSAN CHEMICAL CORPORATION
- Current Assignee: NISSAN CHEMICAL CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP 16167251 2016.08.29
- International Application: PCT/JP2017/030753 2017.08.28
- International Announcement: WO2018/043407A 2018.03.08
- Date entered country: 2019-02-27
- Main IPC: G03F7/40
- IPC: G03F7/40 ; G03F7/004 ; G03F7/075 ; G03F7/11 ; C08G77/38 ; C09D183/04 ; C08G77/18 ; C08G77/00

Abstract:
An acetal-protected polysiloxane composition, used as a photosensitive composition and a coating composition for forming a flat film on a substrate to be processed for performing pattern reversal. A coating composition or photosensitive composition including: a polysiloxane obtained from a hydrolysis-condensation product of a hydrolyzable silane having 2 to 4 hydrolyzable groups in a molecule by protecting the condensation product's silanol groups with acetal groups, wherein in the hydrolysis-condensation product, an organic group bonded to silicon atoms through Si—C bonds exists in molar ratio of 0≤(organic group)/(Si)≤0.29 on average. Method for producing semiconductor device, including steps: forming resist film on a semiconductor substrate; exposing resist film and developing resist after exposure to obtain resist pattern; applying the coating composition onto patterned resist film to embed the polysiloxane; curing the embedded polysiloxane and then etching resist film to reverse the pattern; and processing substrate using polysiloxane film.
Public/Granted literature
- US20190185707A1 ACETAL-PROTECTED SILANOL GROUP-CONTAINING POLYSILOXANE COMPOSITION Public/Granted day:2019-06-20
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