Invention Grant
- Patent Title: Polishing composition, polishing method, and method of producing semiconductor substrate
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Application No.: US17901412Application Date: 2022-09-01
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Publication No.: US11884843B2Publication Date: 2024-01-30
- Inventor: Ryota Mae
- Applicant: FUJIMI INCORPORATED
- Applicant Address: JP Aichi
- Assignee: FUJIMI INCORPORATED
- Current Assignee: FUJIMI INCORPORATED
- Current Assignee Address: JP Aichi
- Agency: Katten Muchin Rosenman LLP
- Priority: JP 20049621 2020.03.19
- Main IPC: C09G1/02
- IPC: C09G1/02 ; H01L21/3105 ; B24B7/22 ; C09K3/14

Abstract:
A polishing composition according to the present invention contains abrasive grains, a basic inorganic compound, an anionic water-soluble polymer, and a dispersing medium, in which a zeta potential of the abrasive grains is negative, an aspect ratio of the abrasive grains is 1.1 or less, in a particle size distribution of the abrasive grains obtained by a laser diffraction/scattering method, a ratio D90/D50 of a particle diameter D90 when an integrated particle mass reaches 90% of a total particle mass from a fine particle side to a particle diameter D50 when the integrated particle mass reaches 50% of the total particle mass from the fine particle side is more than 1.3, and the basic inorganic compound is an alkali metal salt.
Public/Granted literature
- US20230014626A1 POLISHING COMPOSITION, POLISHING METHOD, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE Public/Granted day:2023-01-19
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