Invention Grant
- Patent Title: Deposition method and deposition apparatus
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Application No.: US17804174Application Date: 2022-05-26
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Publication No.: US11885015B2Publication Date: 2024-01-30
- Inventor: Katsumasa Yamaguchi , Tsubasa Yokoi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP 21094462 2021.06.04
- Main IPC: C23C16/56
- IPC: C23C16/56 ; C23C16/40 ; C23C16/52
Abstract:
A deposition method includes preparing a substrate having an insulating film formed thereon; forming a molybdenum film on the insulating film by supplying a molybdenum-containing gas and a reducing gas to the substrate; and heat-treating the substrate having the molybdenum film formed on the insulating film, without exposing the substrate to atmospheric air.
Public/Granted literature
- US20220389573A1 DEPOSITION METHOD AND DEPOSITION APPARATUS Public/Granted day:2022-12-08
Information query
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