Invention Grant
- Patent Title: Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus and recording medium
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Application No.: US17843436Application Date: 2022-06-17
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Publication No.: US11885016B2Publication Date: 2024-01-30
- Inventor: Kazuhiro Harada , Shintaro Kogura , Masayoshi Minami
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JP 19145220 2019.08.07
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/30 ; C23C16/44

Abstract:
There is included (a) forming a film on a substrate by supplying a first processing gas to the substrate in a process container; (b) forming a first pre-coated film, which has a first thickness and has a material different from a material of the film formed in (a), in the process container by supplying a second processing gas into the process container in a state in which the substrate does not exist in the process container; and (c) forming a second pre-coated film, which has a second thickness smaller than the first thickness and has the same material as the material of the film formed in (a), on the first pre-coated film formed in the process container by supplying a third processing gas into the process container in the state in which the substrate does not exist in the process container.
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Information query
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