Invention Grant
- Patent Title: Open Czochralski furnace for single crystal growth
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Application No.: US18063646Application Date: 2022-12-08
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Publication No.: US11885037B2Publication Date: 2024-01-30
- Inventor: Yu Wang , Weiming Guan , Zhenxing Liang
- Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Applicant Address: CN Sichuan
- Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Current Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Current Assignee Address: CN Meishan
- Agency: METIS IP LLC
- Main IPC: C30B15/14
- IPC: C30B15/14 ; C30B15/30

Abstract:
The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a filler filled in a space between the first drum and the second drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.
Public/Granted literature
- US20230113889A1 OPEN CZOCHRALSKI FURNACE FOR SINGLE CRYSTAL GROWTH Public/Granted day:2023-04-13
Information query
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