Invention Grant
- Patent Title: EUV photo masks and manufacturing method thereof
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Application No.: US17986514Application Date: 2022-11-14
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Publication No.: US11886109B2Publication Date: 2024-01-30
- Inventor: Yun-Yue Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Studebaker & Brackett PC
- Main IPC: G03F1/24
- IPC: G03F1/24

Abstract:
A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The absorber layer includes one or more layers of an Ir based material, a Pt based material or a Ru based material.
Public/Granted literature
- US20230071118A1 EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF Public/Granted day:2023-03-09
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