Invention Grant
- Patent Title: Read and write methods and memory devices
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Application No.: US17310415Application Date: 2020-11-20
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Publication No.: US11886287B2Publication Date: 2024-01-30
- Inventor: Shuliang Ning
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Anhui
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Anhui
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2010250023.3 2020.04.01
- International Application: PCT/CN2020/130391 2020.11.20
- International Announcement: WO2021/196663A 2021.10.07
- Date entered country: 2021-07-31
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/10 ; G06F3/06 ; G06F11/14 ; G06F11/07

Abstract:
A read and write method includes: applying a read command to a memory device, the read command indicating address information; reading data to be read from a storage unit corresponding to the address information indicated by the read command; and if an error occurs in the data to be read, associating the address information indicated by the read command with a spare storage unit, and backing up the address information indicated by the read command and association information between the address information and the spare storage unit in a non-volatile storage unit based on a preset rule.
Public/Granted literature
- US20220317890A1 READ AND WRITE METHODS AND MEMORY DEVICES Public/Granted day:2022-10-06
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