Invention Grant
- Patent Title: Memory system
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Application No.: US17627013Application Date: 2021-08-16
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Publication No.: US11886292B2Publication Date: 2024-01-30
- Inventor: Kangling Ji
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2110050737.4 2021.01.14
- International Application: PCT/CN2021/112699 2021.08.16
- International Announcement: WO2022/151730A 2022.07.21
- Date entered country: 2022-01-13
- Main IPC: H03M13/27
- IPC: H03M13/27 ; H04L27/34 ; H04L1/00 ; H03M13/25 ; G06F11/10 ; H03K19/20

Abstract:
Provided is a memory system, which includes: a memory, configured to, during a read or write operation, write or read multiple data, the multiple data are divided into M bytes, each having N data; and an encoding module, configured to generate, at an encoding stage, X first check codes, each based on a subset of the data at fixed bits among all the bytes, and to generate, at the encoding stage, Y second check codes based on all data in a subset of the bytes, the X first check codes are configured for at least one of error detection or error correction on the N data in each of the bytes, and the Y second check codes are configured for at least one of error detection or error correction on the M bytes.
Public/Granted literature
- US20220365844A1 MEMORY SYSTEM Public/Granted day:2022-11-17
Information query
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