Invention Grant
- Patent Title: Fast mode for a memory device
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Application No.: US17051113Application Date: 2019-11-20
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Publication No.: US11886708B2Publication Date: 2024-01-30
- Inventor: Minjian Wu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- International Application: PCT/CN2019/119708 2019.11.20
- International Announcement: WO2021/097711A 2021.05.27
- Date entered country: 2020-10-27
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06 ; G06F12/02

Abstract:
Methods, systems, and devices for fast mode for a memory device are described. In some examples, a memory device may be initialized during a system boot procedure. The memory device may support multiple modes of operation, including at least a first mode that includes a first set of capabilities, and a second made that includes the first set of capabilities, as well as one or more additional capabilities. The memory device may perform the initialization while operating the memory device according to the first mode, which may include delaying one or more actions associated with the one or more additional capabilities. After the system boot procedure is complete, the memory device may operate according to the second mode, which may include performing an action delayed during the system boot.
Public/Granted literature
- US20230342033A1 FAST MODE FOR A MEMORY DEVICE Public/Granted day:2023-10-26
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