Invention Grant
- Patent Title: Method and storage device for improving NAND flash memory performance for intensive read workloads
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Application No.: US17459539Application Date: 2021-08-27
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Publication No.: US11886741B2Publication Date: 2024-01-30
- Inventor: Tushar Tukaram Patil , Anantha Sharma , Sharath Kumar Kodase
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: IN 2141017782 2021.04.16
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F11/10 ; G06F12/10

Abstract:
A method for reading data in a storage device is provided. The method includes receiving a read command from a host device, wherein the read command indicates stored data in the storage device and a Logical Block Address (LBA) of the stored data; obtaining a Physical Block Number (PBN) based on the LBA and a Logical to Physical (L2P) mapping; determining whether the PBN corresponds to a volatile memory of the storage device; reading the stored data directly from the volatile memory based on the PBN corresponding to the volatile memory; incrementing a read counter associated with the PBN based on the stored data being read directly from the volatile memory; and reading the stored data from a non-volatile memory of the storage device based on the PBN not corresponding to the volatile memory.
Public/Granted literature
- US20220334768A1 METHOD AND STORAGE DEVICE FOR IMPROVING NAND FLASH MEMORY PERFORMANCE FOR INTENSIVE READ WORKLOADS Public/Granted day:2022-10-20
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