Invention Grant
- Patent Title: Data writing method
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Application No.: US17408603Application Date: 2021-08-23
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Publication No.: US11887658B2Publication Date: 2024-01-30
- Inventor: Kangling Ji
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2011090399.9 2020.10.13
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C11/4094 ; G11C11/408 ; G11C5/06 ; G11C11/4074 ; G11C11/4091 ; G11C11/4093 ; G11C11/4096

Abstract:
A data writing method and a memory, in which the data writing method is used for writing data to a memory array of the memory. The data writing method includes that: old data is read from a target column of the memory array; the old data is updated according to data to be written which carries target data bits information to generate new data; and the new data is written into the target column, in which the memory includes a plurality of data columns, the data is required to be written into the target column, and the target column includes a part of the data columns.
Public/Granted literature
- US20210398587A1 DATA WRITING METHOD Public/Granted day:2021-12-23
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