Embodiments provide for predicting rowhammer attack vulnerability of one or more memory cells of a direct random access memory (DRAM) chip, the DRAM chip including a plurality of memory cells. An example method, determines, for each memory cell of a subset of memory cells of the plurality of memory cells, a leakage time t, a resistance of intrinsic leakage RL based at least in part on the leakage time t, an activation time of an adjacent aggressor row to flip a bit in the memory cell, a resistance of coupling leaking RSW based at least in part on the activation time, and a toggling count. The method identifies, based at least in part on one or more of the RSW, RL, or toggling count, whether the direct random memory access (DRAM) chip is vulnerable to a rowhammer attack.