Plasma processing system and method using radio frequency (RF) and microwave power
Abstract:
In one example, a plasma processing system includes a vacuum system, a plasma processing chamber including a chamber cavity coupled to the vacuum system, a substrate holder including a surface disposed inside the chamber cavity, a radio frequency (RF) source electrode coupled to an RF power source, the RF source electrode configured to ignite plasma in the chamber cavity. The system includes a microwave source coupled to a microwave oscillator, and a conductive spatial uniformity component including a plurality of through openings, where the conductive spatial uniformity component includes a major surface electromagnetically coupled to the microwave source, the major surface configured to couple microwave power to the plasma in the chamber cavity.
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