Invention Grant
- Patent Title: Plasma processing system and method using radio frequency (RF) and microwave power
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Application No.: US17307691Application Date: 2021-05-04
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Publication No.: US11887815B2Publication Date: 2024-01-30
- Inventor: Yunho Kim , Yanxiang Shi , Mingmei Wang
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Slater Matsil, LLP
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01J37/18 ; H01L21/67

Abstract:
In one example, a plasma processing system includes a vacuum system, a plasma processing chamber including a chamber cavity coupled to the vacuum system, a substrate holder including a surface disposed inside the chamber cavity, a radio frequency (RF) source electrode coupled to an RF power source, the RF source electrode configured to ignite plasma in the chamber cavity. The system includes a microwave source coupled to a microwave oscillator, and a conductive spatial uniformity component including a plurality of through openings, where the conductive spatial uniformity component includes a major surface electromagnetically coupled to the microwave source, the major surface configured to couple microwave power to the plasma in the chamber cavity.
Public/Granted literature
- US20220246386A1 Plasma Processing System and Method Using Radio Frequency (RF) and Microwave Power Public/Granted day:2022-08-04
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