Invention Grant
- Patent Title: Power semiconductor device, method for manufacturing power semiconductor device, and power conversion apparatus
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Application No.: US17683002Application Date: 2022-02-28
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Publication No.: US11887903B2Publication Date: 2024-01-30
- Inventor: Tomonori Tagami
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP 21070532 2021.04.19
- Main IPC: H01L23/26
- IPC: H01L23/26 ; H01L21/48 ; H01L23/053 ; H01L23/367 ; H01L23/14 ; H01L23/498 ; H01L23/31

Abstract:
A semiconductor element is bonded to a circuit pattern integrated with an insulating layer and a heat radiation fin, a case is bonded to a peripheral edge of the heat radiation fin so as to surround the semiconductor element, the circuit pattern, and the insulating layer, and a sealing resin is sealed in a region surrounded by the insulating layer, the circuit pattern, and the case. An internal electrode includes a flat plate-shaped portion, and is provided with a through hole and a pair of bent and inclined-shaped support portions. The support portion is bonded to the circuit pattern, and the upper surface of the semiconductor element, the through hole, and an embossed portion provided around the through hole are bonded. The internal electrode, and an external electrode integrally molded with the case, are bonded.
Public/Granted literature
Information query
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