Invention Grant
- Patent Title: Integrally bonded semiconductor device and power converter including the same
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Application No.: US17602634Application Date: 2019-07-11
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Publication No.: US11887904B2Publication Date: 2024-01-30
- Inventor: Daisuke Oya
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2019/027577 2019.07.11
- International Announcement: WO2021/005797A 2021.01.14
- Date entered country: 2021-10-08
- Main IPC: H01L23/10
- IPC: H01L23/10 ; H01L23/049 ; H01L23/373 ; H02P27/06 ; H01L23/00 ; H01L23/24

Abstract:
It is an object to provide technology allowing for improvement in productivity of a semiconductor device. A semiconductor device includes: a base plate; an insulating substrate including a ceramic plate integrally bonded to an upper surface of the base plate with no solder layer therebetween and a circuit pattern disposed on an upper surface of the ceramic plate; a semiconductor element mounted on an upper surface of the circuit pattern; a case surrounding the insulating substrate and the semiconductor element over the base plate; an adhesive to adhere a lower portion of the case to an outer peripheral portion of the ceramic plate; and a sealant to seal the interior of the case, wherein the adhesive is in contact with an outer peripheral end of the ceramic plate to an outer peripheral end of the circuit pattern.
Public/Granted literature
- US20220165631A1 SEMICONDUCTOR DEVICE AND POWER CONVERTER Public/Granted day:2022-05-26
Information query
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