Invention Grant
- Patent Title: Semiconductor storage device
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Application No.: US17011755Application Date: 2020-09-03
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Publication No.: US11887911B2Publication Date: 2024-01-30
- Inventor: Daigo Suzuki , Kosuke Awaga
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 20072188 2020.04.14
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/433 ; H05K1/02 ; H05K1/14 ; H05K1/18 ; H05K5/00 ; H05K7/20

Abstract:
A semiconductor storage device includes a housing, an interface substrate attached to the housing, an insulating substrate in the housing, a first flexible substrate connecting the insulating substrate and the interface substrate, a first integrated circuit on a first surface of the insulating substrate, and a first heat conductor arranged on a second surface of the insulating substrate that is opposite to the first surface, and contacting a first inner surface of the housing.
Public/Granted literature
- US20210320049A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2021-10-14
Information query
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