Invention Grant
- Patent Title: Manufacturing method of semiconductor device
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Application No.: US17501598Application Date: 2021-10-14
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Publication No.: US11887933B2Publication Date: 2024-01-30
- Inventor: Yosuke Nakata , Yuji Sato
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP 21045845 2021.03.19
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/00 ; H01L23/10

Abstract:
A semiconductor chip including a main electrode and a control electrode is bonded to a substrate. A wiring chip including a first electrode, a second electrode and a wiring is bonded to the substrate. A main electrode member is bonded to the main electrode. A control electrode member is bonded to the second electrode. The control electrode is bonded to the first electrode with a connection member. The semiconductor chip, the substrate, the wiring chip, the main electrode member, the control electrode member and the connection member are putted into a mold and are sealed with sealing material by injecting the sealing material into the mold in a state that distal end surfaces of the main electrode member and the control electrode member are pressed against a buffer material provided between the main electrode member/the control electrode member and the mold. The sealing material is not ground.
Public/Granted literature
- US20220302036A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2022-09-22
Information query
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