Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US17208393Application Date: 2021-03-22
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Publication No.: US11888018B2Publication Date: 2024-01-30
- Inventor: Seung-Muk Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T GROUP LLP
- Priority: KR 20190037176 2019.03.29
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/311

Abstract:
A capacitor includes a plurality of lower bottom electrodes, a lower supporter supporting the lower bottom electrodes and including a plurality of lower supporter openings, upper bottom electrodes formed on the lower bottom electrodes, respectively, and an upper supporter supporting the upper bottom electrodes and including a plurality of upper supporter openings, wherein the lower supporter openings and the upper supporter openings do not vertically overlap each other.
Public/Granted literature
- US20210210593A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-07-08
Information query
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