Invention Grant
- Patent Title: Method and system of operating a bi-directional double-base bipolar junction transistor (B-TRAN)
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Application No.: US18053839Application Date: 2022-11-09
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Publication No.: US11888030B2Publication Date: 2024-01-30
- Inventor: John Wood , Alireza Mojab , Daniel Brdar , Ruiyang Yu
- Applicant: IDEAL POWER INC.
- Applicant Address: US TX Austin
- Assignee: IDEAL POWER INC.
- Current Assignee: IDEAL POWER INC.
- Current Assignee Address: US TX Austin
- Agency: Dickinson Wright PLLC
- Agent Mark E. Scott
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H03K17/082 ; H01L29/747 ; H01L29/732

Abstract:
Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper-main lead of the transistor, through the transistor, and from a lower-main lead of the transistor to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower-main lead to the lower terminal by opening a lower-main FET and commutating a first shutoff current through a lower-control lead the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.
Public/Granted literature
- US20230066664A1 METHOD AND SYSTEM OF OPERATING A BI-DIRECTIONAL DOUBLE-BASE BIPOLAR JUNCTION TRANSISTOR (B-TRAN) Public/Granted day:2023-03-02
Information query
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