Invention Grant
- Patent Title: Field-effect transistor and manufacturing method therefor
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Application No.: US17280499Application Date: 2019-10-16
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Publication No.: US11888053B2Publication Date: 2024-01-30
- Inventor: Takuya Tsutsumi , Hideaki Matsuzaki
- Applicant: Nippon Telegraph and Telephone Corporation
- Applicant Address: JP Tokyo
- Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee Address: JP Tokyo
- Agency: Slater Matsil, LLP
- Priority: JP 18204826 2018.10.31
- International Application: PCT/JP2019/040629 2019.10.16
- International Announcement: WO2020/090467A 2020.05.07
- Date entered country: 2021-03-26
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/285 ; H01L29/205 ; H01L29/423 ; H01L29/66
Abstract:
A gate opening portion, which is disposed within a recess formation region in a state where the distance from a drain electrode is greater than the distance from a source electrode, is formed in an insulating layer. The gate opening portion is a stripe-shaped opening that extends in a gate width direction. Also, a plurality of asymmetric recess-forming opening portions are formed, arranged in a row in the gate width direction between the gate opening portion and the drain electrode within the recess formation region in the insulating layer. In this step, asymmetric recess-forming opening portions are formed whose opening size in the gate length direction is greater than the opening size in the gate width direction.
Public/Granted literature
- US20210359119A1 Field-Effect Transistor and Manufacturing Method Therefor Public/Granted day:2021-11-18
Information query
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