A silicon carbide MOS-gated semiconductor device comprises a silicon carbide substrate, a drift layer, a first doped region, a second doped region, a plurality of third doped regions, a gate insulating layer, a gate electrode, an interlayer dielectric layer, and a metal layer. The gate electrode comprises a gate bus region and an active region. The active region comprises a plurality of gate electrode openings. The two adjacent gate electrode openings have a minimum width (Wg) which is satisfied the following formula:

Wg>Wjfet+2×Lch+2×Lx

Lch represents a channel length of channel regions, Wjfet represents a minimum width of JFET regions, and Lx represents a minimum overlapping length between the gate electrode and the second doped region.