A technique for maintaining maximum unipolar current density while improving I2t tolerance is provided. In a semiconductor device, a first impurity layer and a Schottky interface are formed to sandwich a well layer therebetween. A first impurity layer is formed from an outermost layer of the well layer located closer to the Schottky interface than a source layer to below the source layer. The lower face of the first impurity layer is located below the Schottky interface.