Invention Grant
- Patent Title: Power MOSFET with improved safe operating area
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Application No.: US17446672Application Date: 2021-09-01
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Publication No.: US11888060B2Publication Date: 2024-01-30
- Inventor: Prasad Venkatraman
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Scottsdale
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L29/10
Abstract:
A MOSFET device die includes an active area formed on a semiconductor substrate. The active area includes a first active area portion and a second active area portion. At least one mesa is formed in the semiconductor substrate extending in a longitudinal direction through the active area. The at least one mesa includes a channel region extending in a longitudinal direction. The channel region includes low threshold voltage channel portions and high threshold voltage channel portions. The first active area portion includes the channel portions in a first ratio of low threshold voltage channel portions to high threshold voltage channel portions, and the second active area portion includes channel portions in a second ratio of low threshold voltage channel portions to high threshold voltage channel portions. The first ratio is larger than the second ratio.
Public/Granted literature
- US20230065659A1 POWER MOSFET WITH IMPROVED SAFE OPERATING AREA Public/Granted day:2023-03-02
Information query
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