Invention Grant
- Patent Title: Flash memory device with three-dimensional half flash structure and methods for forming the same
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Application No.: US17868192Application Date: 2022-07-19
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Publication No.: US11888074B2Publication Date: 2024-01-30
- Inventor: Yu-Chu Lin , Chi-Chung Jen , Yi-Ling Liu , Wen-Chih Chiang , Keng-Ying Liao , Huai-Jen Tung
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: The Marbury Law Group, PLLC
- The original application number of the division: US17191334 2021.03.03
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/265 ; H01L21/28 ; H01L29/423 ; H01L29/417 ; H01L29/66 ; H01L29/78 ; H10B41/30
Abstract:
A flash memory device and method of making the same are disclosed. The flash memory device is located on a substrate and includes a floating gate electrode, a tunnel dielectric layer located between the substrate and the floating gate electrode, a smaller length control gate electrode and a control gate dielectric layer located between the floating gate electrode and the smaller length control gate electrode. The length of a major axis of the smaller length control gate electrode is less than a length of a major axis of the floating gate electrode.
Public/Granted literature
- US20220359760A1 FLASH MEMORY DEVICE WITH THREE-DIMENSIONAL HALF FLASH STRUCTURE AND METHODS FOR FORMING THE SAME Public/Granted day:2022-11-10
Information query
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