Invention Grant
- Patent Title: Wideband low-noise amplifier
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Application No.: US17210416Application Date: 2021-03-23
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Publication No.: US11888453B2Publication Date: 2024-01-30
- Inventor: Alaaeldien Mohamed Abdelrazek Medra , Francesco Gatta
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: QUALCOMM Incorporated
- Main IPC: H03F1/22
- IPC: H03F1/22 ; H03F3/19

Abstract:
A wideband amplifier includes a first stage and a second stage. The first stage includes a transconductance transistor driven by an input signal through an input transformer. The transconductance transistor couples to a cascode transistor forming an output node for the first stage. The second stage couples the output node from the first stage through an output transformer to drive an output transistor.
Public/Granted literature
- US20220311391A1 WIDEBAND LOW-NOISE AMPLIFIER Public/Granted day:2022-09-29
Information query
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