Invention Grant
- Patent Title: On die termination circuit and memory device
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Application No.: US17385439Application Date: 2021-07-26
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Publication No.: US11888474B2Publication Date: 2024-01-30
- Inventor: ChihCheng Liu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Anhui
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN 2010493235.4 2020.06.03
- Main IPC: H03K19/00
- IPC: H03K19/00 ; G11C7/10

Abstract:
An on die termination (ODT) circuit includes a signal input terminal; a grounding terminal; a first transistor including a control terminal and a first terminal which are electrically connected with the signal input terminal, and a second terminal electrically connected with the grounding terminal; and a second transistor including a control terminal electrically connected with the signal input terminal, a first terminal, and a second terminal electrically connected with the grounding terminal, and when voltage of the signal input terminal changes, the first transistor has a change trend of resistance opposite to that of the second transistor.
Public/Granted literature
- US20210384905A1 ON DIE TERMINATION CIRCUIT AND MEMORY DEVICE Public/Granted day:2021-12-09
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