Invention Grant
- Patent Title: Delay locked loop including replica fine delay circuit and memory device including the same
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Application No.: US17888199Application Date: 2022-08-15
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Publication No.: US11888489B2Publication Date: 2024-01-30
- Inventor: Junsub Yoon , Hun-Dae Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR 20220015721 2022.02.07
- Main IPC: H03L7/081
- IPC: H03L7/081 ; G11C7/22 ; H03L7/083

Abstract:
In some embodiments of the present disclosure, a delay locked loop includes a coarse delay circuit configured to delay a reference clock signal to generate a first clock signal, a fine delay circuit configured to delay the first clock signal to generate a second clock signal, a first delay circuit configured to delay the second clock signal to generate a third clock signal, a second delay circuit configured to delay the first clock signal to generate a fourth clock signal, a third delay circuit configured to delay the fourth clock signal to generate a fifth clock signal, a phase detector configured to detect a phase difference between the reference clock signal and the fifth clock signal, and a controller configured to adjust, a first delay amount of the coarse delay circuit, a second delay amount of the fine delay circuit and a third delay amount of the third delay circuit.
Public/Granted literature
- US20230253971A1 DELAY LOCKED LOOP INCLUDING REPLICA FINE DELAY CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2023-08-10
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