According to one embodiment, a semiconductor memory device includes a first conductive layer, a second conductive layer, and at least one memory structure. The first conductive layer includes a first portion, a second portion, and a third portion, a fourth portion, and a fifth portion. The first portion is provided between the second portion and the third portion in a second direction. The second conductive layer includes a sixth portion, a seventh portion, and an eighth portion, a ninth portion, and a tenth portion. The sixth portion is provided between the seventh portion and the eighth portion in the second direction. The second portion is provided between the sixth portion and the eighth portion in the second direction.