Invention Grant
- Patent Title: Memory cell with top electrode via
-
Application No.: US17872520Application Date: 2022-07-25
-
Publication No.: US11889769B2Publication Date: 2024-01-30
- Inventor: Ming-Che Ku , Harry-Hak-Lay Chuang , Hung Cho Wang , Tsun Chung Tu , Jiunyu Tsai , Sheng-Huang Huang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- The original application number of the division: US16416555 2019.05.20
- Main IPC: H10N50/80
- IPC: H10N50/80 ; H01F10/32 ; H01F41/34 ; H01L21/768 ; H01L23/522 ; H01L23/528 ; H10B61/00 ; H10N50/01 ; G11C11/16

Abstract:
The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a magnetic tunnel junction arranged between a bottom electrode and a top electrode and surrounded by a dielectric structure disposed over a substrate. The top electrode has a width that decreases as a height of the top electrode increases. A bottom electrode via couples the bottom electrode to a lower interconnect. An upper interconnect structure is coupled to the top electrode. The upper interconnect structure has a vertically extending surface that is disposed laterally between first and second outermost sidewalls of the upper interconnect structure and along a sidewall of the top electrode. The vertically extending surface and the first outermost sidewall are connected to a bottom surface of the upper interconnect structure that is vertically below a top of the top electrode.
Public/Granted literature
- US20220359815A1 MEMORY CELL WITH TOP ELECTRODE VIA Public/Granted day:2022-11-10
Information query