Invention Grant
- Patent Title: Group 13 element nitride wafer with reduced variation in off-cut angle
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Application No.: US17774690Application Date: 2020-11-05
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Publication No.: US11891719B2Publication Date: 2024-02-06
- Inventor: Vianney Leroux , Vincent Gelly , Nabil Nahas , Kevin Provost
- Applicant: IV WORKS CO., LTD
- Applicant Address: KR Daejeon
- Assignee: IV WORKS CO., LTD
- Current Assignee: IV WORKS CO., LTD
- Current Assignee Address: KR Daejeon
- Agency: Lerner David LLP
- Priority: FR 12414 2019.11.05
- International Application: PCT/FR2020/052004 2020.11.05
- International Announcement: WO2021/089947A 2021.05.14
- Date entered country: 2022-05-05
- Main IPC: C30B25/02
- IPC: C30B25/02 ; C30B29/40 ; C30B33/08

Abstract:
The invention relates to a two-dimensional crystal wafer of group 13 or III element nitride which is delimited by a face of orientation N, an opposing face of orientation E depending on the group 13 or III element, E being selected preferably from Ga, In, Al or a combination of these elements, characterized in that the variation in crystalline off-cut angle in the largest dimension of said wafer is less than 5×10-3°/mm, and its curvature of geometric deformation of its faces exhibits a flexure in terms of absolute value of less than 10-3 mm/mm of the largest dimension of said wafer.
Public/Granted literature
- US11965268B2 Group 13 element nitride wafer with reduced variation in off-cut angle Public/Granted day:2024-04-23
Information query
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