Invention Grant
- Patent Title: Method for detecting environmental parameter in semiconductor fabrication facility
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Application No.: US17460020Application Date: 2021-08-27
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Publication No.: US11892382B2Publication Date: 2024-02-06
- Inventor: Chih-Ming Tsao , Tzu-Sou Chuang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- Main IPC: G01N1/24
- IPC: G01N1/24 ; G01N1/22 ; G08B3/10

Abstract:
A method of monitoring a semiconductor fabrication facility and a semiconductor fabrication facility are provided. The method includes collecting an ambient air in a clean room through a plurality of gas lines with their gas inlets arranged at a plurality of sampling positions in the clean room. The method also includes measuring a parameter of the ambient air by a plurality of metrology devices which are connected to the gas lines. At least two of the sampling positions are measured simultaneously. The method further includes issuing a warning when the parameter detected by the metrology devices is outside a range of acceptable values.
Public/Granted literature
- US20230066693A1 METHOD FOR DETECTING ENVIRONMENTAL PARAMETER IN SEMICONDUCTOR FABRICATION FACILITY Public/Granted day:2023-03-02
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