Invention Grant
- Patent Title: Semiconductor device and test method of semiconductor device
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Application No.: US17898102Application Date: 2022-08-29
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Publication No.: US11892503B2Publication Date: 2024-02-06
- Inventor: Takuya Kusaka , Hirosuke Narai , Kazunori Masuda , Makoto Iwai
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Toshiba Tec Kabushiki Kaisha
- Current Assignee: Toshiba Tec Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 22043053 2022.03.17
- Main IPC: G01R31/28
- IPC: G01R31/28 ; H01L23/00 ; H01L25/065 ; H01L23/538 ; H01L23/498

Abstract:
A semiconductor device includes first and second chips in a package. A first pad is on the first chip and electrically connected to a node between a power supply pad and a ground pad on the first chip. Second and third pads are on the second chip. An internal wiring connects the first pad to the second pad within the package. A power circuit on the semiconductor chip configured to supply a current to the second pad. A switch is on the second chip between the second pad and the power supply circuit to connect or disconnect the second pad from the power circuit. A control circuit is on the second chip and configured to output a first signal for the switch in response to a test signal supplied to the third pad and a second signal to the power circuit to cause the power circuit to output current.
Public/Granted literature
- US20230296669A1 SEMICONDUCTOR DEVICE AND TEST METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2023-09-21
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